Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors
文献类型：期刊论文
| 作者 | Wan Q(万青) ; Li Qiang Guo,1 Chang Jin Wan,1,2 Li Qiang Zhu,1 and Qing Wan1,2,a) |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2013-09-10 |
| 卷号 | 48期号:11页码:113503-1—113503-5 |
| 通讯作者 | 万青 |
| 合作状况 | 李雨桐 |
| 中文摘要 | Multilevel memory capability of self-assembled indium-zinc-oxide (IZO) electric-double-layer (EDL) thin-film transistors gated by nanogranular SiO2 proton conducting electrolytes is investigated. More than four distinct memory states are obtained by programming gate voltage. The observed multilevel storage behavior is mainly due to the controlled interfacial electrochemical doping of IZO channel by penetrated protons under programmed gate voltages. In addition, such IZO-based EDL transistor multilevel memory exhibits good characteristics of programming/erasing endurance and data retention. Such oxide-based EDL transistors with protoninduced multilevel memory behavior are interesting for low-cost memory and neuromorphic system applications after further properties and size optimization. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/10031]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | Wan Q,Li Qiang Guo,1 Chang Jin Wan,1,2 Li Qiang Zhu,1 and Qing Wan1,2,a). Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors[J]. Applied Physics Letters,2013,48(11):113503-1—113503-5. |
| APA | Wan Q,&Li Qiang Guo,1 Chang Jin Wan,1,2 Li Qiang Zhu,1 and Qing Wan1,2,a).(2013).Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors.Applied Physics Letters,48(11),113503-1—113503-5. |
| MLA | Wan Q,et al."Proton induced multilevel storage capability in self-assembled indium-zinc-oxide thin-film transistors".Applied Physics Letters 48.11(2013):113503-1—113503-5. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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