Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors
文献类型：期刊论文
| 作者 | 万青、施毅 ; Liqiang Guo, Qing Wan, Changjin Wan, Liqiang Zhu, and Yi Shi |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2013-10-30 |
| 卷号 | 545期号:12页码:1581—1583 |
| 通讯作者 | 万青、施毅 |
| 合作状况 | 李雨桐 |
| 中文摘要 | Short-term memory (STM) is a temporary potentiation of neural connections, and it can be transformed to long-term memory (LTM) through the process of rehearsal and meaningful association. Here, indium-zinc oxide (IZO)-based synaptic transistors gated by SiO2-based proton conducting electrolyte films were fabricated. STM behavior is demonstrated by paired-pulse facilitation experiment. STM to LTM transition is realized by increasing the pulse amplitude or pulse number. Interfacial electrostatic modulation and electrochemical doping of IZO channel by mobile proton play an important role for such memory behavior and memory transition. |
| 学科主题 | 物理化学 |
| 原文出处 | SCI收录 |
| 公开日期 | 2013-12-16 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/10079]  |
| 专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
| 推荐引用方式 GB/T 7714 | 万青、施毅,Liqiang Guo, Qing Wan, Changjin Wan, Liqiang Zhu, and Yi Shi. Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors[J]. IEEE Electron Device Letters,2013,545(12):1581—1583. |
| APA | 万青、施毅,&Liqiang Guo, Qing Wan, Changjin Wan, Liqiang Zhu, and Yi Shi.(2013).Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors.IEEE Electron Device Letters,545(12),1581—1583. |
| MLA | 万青、施毅,et al."Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors".IEEE Electron Device Letters 545.12(2013):1581—1583. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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