中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In Situ Growth of Columnar MoO3 Buffer Layer for Organic Photovoltaic Applications

文献类型:期刊论文

作者酒同钢,鲁福身,方俊锋 ; Guojie Wanga,b, Tonggang Jiu b,⇑, Pandeng Li b, Jun Li b, Chunming Sun b, Fushen Lu a,⇑, Junfeng Fang b,⇑
刊名Organic Electronics
出版日期2013-11-06
卷号27期号:15页码:29—34
通讯作者酒同钢,鲁福身,方俊锋
合作状况李雨桐
中文摘要Columnar MoO3 in situ growth prepared from direct converting soluble Mo-containing precursor during active layer thermal annealing was utilized as anode buffer layer to fabricate organic bulk heterojunction photovoltaics. The columnar morphology could improve the interface contact between active layer and buffer layer. The structure and phase of in situ formed MoO3 were studied by X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). We demonstrated that the organic photovoltaic devices based on P3HT:PC61BM using in situ formed columnar MoO3 as anode buffer layer presented a high open-circuit voltage and fill factor leading to an efficiency of 3.92%, which is higher than the controlled PEDOT:PSS-based devices.
学科主题有机光伏
原文出处其他国内刊物
公开日期2013-12-16
源URL[http://ir.nimte.ac.cn/handle/174433/10085]  
专题宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式
GB/T 7714
酒同钢,鲁福身,方俊锋,Guojie Wanga,b, Tonggang Jiu b,⇑, Pandeng Li b, Jun Li b, Chunming Sun b, Fushen Lu a,⇑, Junfeng Fang b,⇑. In Situ Growth of Columnar MoO3 Buffer Layer for Organic Photovoltaic Applications[J]. Organic Electronics,2013,27(15):29—34.
APA 酒同钢,鲁福身,方俊锋,&Guojie Wanga,b, Tonggang Jiu b,⇑, Pandeng Li b, Jun Li b, Chunming Sun b, Fushen Lu a,⇑, Junfeng Fang b,⇑.(2013).In Situ Growth of Columnar MoO3 Buffer Layer for Organic Photovoltaic Applications.Organic Electronics,27(15),29—34.
MLA 酒同钢,鲁福身,方俊锋,et al."In Situ Growth of Columnar MoO3 Buffer Layer for Organic Photovoltaic Applications".Organic Electronics 27.15(2013):29—34.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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