A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance
文献类型：期刊论文
| 作者 | Cai, Y(蔡勇) ; Zhao, DS(赵德胜); Qin, H(秦华); Zhang, BS(张宝顺); Zeng, CH(曾春红)
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| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2013-06 |
| 卷号 | 34期号:6页码:747-749 |
| 关键词 | AlGaN/GaN high electron mobility transistor (HEMT) dynamic performance power device |
| 通讯作者 | Yu, GH(于国浩) |
| 英文摘要 | In this letter, a double-gate AlGaN/GaN high electron mobility transistor operated in a synchronized switching mode is demonstrated, and improved dynamic performances are obtained. The additional gate sits on top of the conventional gate and stretches 2/4 mu m to the source/drain electrodes, respectively. A positive voltage pulse is applied to the top gate and is synchronized with the ON-OFF switching pulse applied to the conventional gate. Such a double-gate driving method significantly improves the dynamic performances of the device. Moreover, it allows us to investigate the dynamic ON-resistance in the drift region in detail. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000319460800010 |
| 公开日期 | 2013-12-30 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1175]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Cai, Y,Zhao, DS,Qin, H,et al. A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(6):747-749. |
| APA | Cai, Y,Zhao, DS,Qin, H,Zhang, BS,&Zeng, CH.(2013).A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance.IEEE ELECTRON DEVICE LETTERS,34(6),747-749. |
| MLA | Cai, Y,et al."A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance".IEEE ELECTRON DEVICE LETTERS 34.6(2013):747-749. |
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