First-principles study of point defects in solar cell semiconductor CuI
文献类型：期刊论文
| 作者 | H. Chen ; C. Y. Wang ; J. T. Wang ; Y. Wu ; S. X. Zhou |
| 刊名 | Physica B-Condensed Matter
 |
| 出版日期 | 2013 |
| 卷号 | 413页码:116-119 |
| 关键词 | CuI Semiconductor Point defects First-principles structural-properties optical-properties pressure cubr cucl halides density films |
| ISSN号 | 0921-4526 |
| 原文出处 | |
| 语种 | 英语 |
| 公开日期 | 2013-12-24 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/71152]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Chen,C. Y. Wang,J. T. Wang,et al. First-principles study of point defects in solar cell semiconductor CuI[J]. Physica B-Condensed Matter,2013,413:116-119. |
| APA | H. Chen,C. Y. Wang,J. T. Wang,Y. Wu,&S. X. Zhou.(2013).First-principles study of point defects in solar cell semiconductor CuI.Physica B-Condensed Matter,413,116-119. |
| MLA | H. Chen,et al."First-principles study of point defects in solar cell semiconductor CuI".Physica B-Condensed Matter 413(2013):116-119. |
入库方式： OAI收割
来源：金属研究所
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