中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films

文献类型:期刊论文

作者X. H. Guo ; K. Q. Du ; Q. Z. Guo ; Y. Wang ; F. H. Wang
刊名Ecs Electrochemistry Letters
出版日期2013
卷号2期号:4页码:C11-C14
关键词2024 al-alloy porous-electrodes grain-growth corrosion
ISSN号2162-8726
原文出处://WOS:000318556400004
语种英语
公开日期2013-12-24
源URL[http://ir.imr.ac.cn/handle/321006/71237]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
X. H. Guo,K. Q. Du,Q. Z. Guo,et al. Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films[J]. Ecs Electrochemistry Letters,2013,2(4):C11-C14.
APA X. H. Guo,K. Q. Du,Q. Z. Guo,Y. Wang,&F. H. Wang.(2013).Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films.Ecs Electrochemistry Letters,2(4),C11-C14.
MLA X. H. Guo,et al."Effect of Carrier Waveform Frequency on the Microstructure of Al2O3 Plasma Electrolyic Oxidation Films".Ecs Electrochemistry Letters 2.4(2013):C11-C14.

入库方式: OAI收割

来源:金属研究所

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