中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors

文献类型:期刊论文

作者W. S. Li ; P. X. Hou ; C. Liu ; D. M. Sun ; J. T. Yuan ; S. Y. Zhao ; L. C. Yin ; H. T. Cong ; H. M. Cheng
刊名Acs Nano
出版日期2013
卷号7期号:8页码:6831-6839
关键词carbon nanotube CVD semiconducting thin-film transistor sensor thin-film transistors absorption-spectroscopy electronic-properties integrated-circuits high-performance dopamine graphene networks sensor hydrogenation
ISSN号1936-0851
原文出处://WOS:000323810600042
语种英语
公开日期2013-12-24
源URL[http://ir.imr.ac.cn/handle/321006/71332]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
W. S. Li,P. X. Hou,C. Liu,et al. High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors[J]. Acs Nano,2013,7(8):6831-6839.
APA W. S. Li.,P. X. Hou.,C. Liu.,D. M. Sun.,J. T. Yuan.,...&H. M. Cheng.(2013).High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors.Acs Nano,7(8),6831-6839.
MLA W. S. Li,et al."High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors".Acs Nano 7.8(2013):6831-6839.

入库方式: OAI收割

来源:金属研究所

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