中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors

文献类型:期刊论文

作者Y. Su ; J. H. Du ; D. M. Sun ; C. Liu ; H. M. Cheng
刊名Nano Research
出版日期2013
卷号6期号:11页码:842-852
关键词inkjet printing graphene oxide high conductivity field effect transistor graphite oxide high-resolution raman-spectra films reduction electrodes sheets stability circuits band
ISSN号1998-0124
原文出处://WOS:000327216700008
语种英语
公开日期2013-12-24
源URL[http://ir.imr.ac.cn/handle/321006/71474]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. Su,J. H. Du,D. M. Sun,et al. Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors[J]. Nano Research,2013,6(11):842-852.
APA Y. Su,J. H. Du,D. M. Sun,C. Liu,&H. M. Cheng.(2013).Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors.Nano Research,6(11),842-852.
MLA Y. Su,et al."Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors".Nano Research 6.11(2013):842-852.

入库方式: OAI收割

来源:金属研究所

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