Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
文献类型：期刊论文
| 作者 | M. H. Wang ; H. Lei ; Y. Seki ; S. Seki ; Y. Sawada ; Y. Hoshi ; S. H. Wang ; L. X. Sun |
| 刊名 | Journal of Thermal Analysis and Calorimetry
 |
| 出版日期 | 2013 |
| 卷号 | 111期号:2页码:1457-1461 |
| 关键词 | Partly crystallized amorphous IO film Water vapor Thermal crystallization kinetic Electrical properties tin-oxide microstructures |
| ISSN号 | 1388-6150 |
| 原文出处 | |
| 语种 | 英语 |
| 公开日期 | 2013-12-24 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/71545]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | M. H. Wang,H. Lei,Y. Seki,et al. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor[J]. Journal of Thermal Analysis and Calorimetry,2013,111(2):1457-1461. |
| APA | M. H. Wang.,H. Lei.,Y. Seki.,S. Seki.,Y. Sawada.,...&L. X. Sun.(2013).Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor.Journal of Thermal Analysis and Calorimetry,111(2),1457-1461. |
| MLA | M. H. Wang,et al."Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor".Journal of Thermal Analysis and Calorimetry 111.2(2013):1457-1461. |
入库方式： OAI收割
来源：金属研究所
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