Electrophoretic deposition of metal oxide films aimed for gas sensors application: The role of anodic aluminum oxide (AAO)/Al composite structure
文献类型：期刊论文
| 作者 | Han, Ning1,2; Deng, Pingye3; Chen, Jiangchao1,2; Chai, Linyu1,2; Gao, Hongshuai1,2; Chen, Yunfa1
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| 刊名 | SENSORS AND ACTUATORS B-CHEMICAL
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| 出版日期 | 2010-01-29 |
| 卷号 | 144期号:1页码:267-273 |
| 关键词 | Anodic aluminum oxide Composite structure Electrophoretic deposition Gas sensor Resistance |
| ISSN号 | 0925-4005 |
| 通讯作者 | Chen, YF |
| 英文摘要 | Anodic aluminum oxide (AAC)/Al composite structure was prepared and used to fabricate metal oxide gas sensing film through electrophoretic deposition (EPD) process, and Ga-doped ZnO (GZO) and GZO post-treated in H(2) (GZO-H) were used as high resistance and low resistance metal oxide models. The results showed that, in EPD process, Al (residual All after anodic oxidation) plays as the electrode with the electric field penetrating the pores of AAO. And dispersant Such as alcohols were preferred as H(2) would be produced on the AAO/Al electrode in aqueous dispersion, which destroyed both the AAO layer and the GZO (or GZO-H) him. While in the gas sensing process, AAO (AAO layer) plays as the insulative layer between GZO (or GZO-H) film and Al Substrate. The thickness of AAO layer should be properly tailored (i.e. >80 mu m) as to make its resistance far larger than that of the GZO film, which prevents the current leakage from the GZO film to the Al substrate. While the thickness can be 10 mu m when GZO-H film was used as its resistance is smaller. The AAO/Al composite structure made the EPD process feasible for gas sensing film fabrication, without any further treatment, which showed prospect in fabrication of metal oxide semiconductor gas sensors. (C) 2009 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation |
| 研究领域[WOS] | Chemistry ; Electrochemistry ; Instruments & Instrumentation |
| 关键词[WOS] | SENSING PROPERTIES ; HARD ANODIZATION ; THIN-FILMS ; FABRICATION ; CERAMICS ; SENSITIVITY ; NANOTUBES ; MECHANISM ; MEMBRANES ; GROWTH |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000274947800042 |
| 公开日期 | 2013-11-27 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/6223]  |
| 专题 | 过程工程研究所_多相复杂系统国家重点实验室 |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 3.Beijing Ctr Phys & Chem Anal, Beijing 100089, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, Ning,Deng, Pingye,Chen, Jiangchao,et al. Electrophoretic deposition of metal oxide films aimed for gas sensors application: The role of anodic aluminum oxide (AAO)/Al composite structure[J]. SENSORS AND ACTUATORS B-CHEMICAL,2010,144(1):267-273. |
| APA | Han, Ning,Deng, Pingye,Chen, Jiangchao,Chai, Linyu,Gao, Hongshuai,&Chen, Yunfa.(2010).Electrophoretic deposition of metal oxide films aimed for gas sensors application: The role of anodic aluminum oxide (AAO)/Al composite structure.SENSORS AND ACTUATORS B-CHEMICAL,144(1),267-273. |
| MLA | Han, Ning,et al."Electrophoretic deposition of metal oxide films aimed for gas sensors application: The role of anodic aluminum oxide (AAO)/Al composite structure".SENSORS AND ACTUATORS B-CHEMICAL 144.1(2010):267-273. |
入库方式： OAI收割
来源：过程工程研究所
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