Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane
文献类型：期刊论文
| 作者 | Yang Yan1,2; Zhang Wei-gang1 |
| 刊名 | JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY
 |
| 出版日期 | 2009-10-01 |
| 卷号 | 16期号:5页码:730-737 |
| 关键词 | methyltrichlorosilane silicon carbide H(2) MTS |
| ISSN号 | 1005-9784 |
| 通讯作者 | Zhang, WG |
| 英文摘要 | Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two different molar ratios of H(2) to MTS (n(H(2))/n(MTS)). The total pressure was kept as 100 kPa and the temperature was varied from 850 to 1100 degrees C at a total residence time of 1 s. Steady-state deposition rates as functions of reactor length and of temperature, investigated at different n(H(2))/n(MTS) values, show that hydrogen exhibits strongly influences on the deposition rate. Especially, the deposition of Si co-deposit can be obtained in broader substrate length and at higher temperatures with increasing hydrogen partial pressure. Influence of hydrogen on the deposition process was also studied using gas phase composition and deposit composition analysis at various n(H(2))/n(MTS). SEM micrographs directly show the variation of surface morphologies at various n(H(2))/n(MTS). It can be found that the crystal grain of the deposit at 1100 degrees C is better developed and the crystallization is also improved with increasing n(H(2))/n(MTS). |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Metallurgy & Metallurgical Engineering |
| 研究领域[WOS] | Metallurgy & Metallurgical Engineering |
| 关键词[WOS] | CH3SICL3/H-2 GAS PRECURSOR ; SILICON-CARBIDE FILMS ; GROWTH-KINETICS ; CVD ; DICHLORODIMETHYLSILANE ; PHASE ; PYROLYSIS ; CERAMICS ; MODEL |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000270849100006 |
| 公开日期 | 2013-11-29 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/6573]  |
| 专题 | 过程工程研究所_多相复杂系统国家重点实验室 |
| 作者单位 | 1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang Yan,Zhang Wei-gang. Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane[J]. JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY,2009,16(5):730-737. |
| APA | Yang Yan,&Zhang Wei-gang.(2009).Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane.JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY,16(5),730-737. |
| MLA | Yang Yan,et al."Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane".JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY 16.5(2009):730-737. |
入库方式： OAI收割
来源：过程工程研究所
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