Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography
文献类型：期刊论文
| 作者 | Wu, Kui1,2; Wei, Tongbo1; Lan, Ding3 ; Wei, Xuecheng1; Zheng, Haiyang1; Chen, Yu1; Lu, Hongxi1; Huang, Kai4; Wang, Junxi1; Luo, Yi2
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| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013-12-09 |
| 卷号 | 103期号:24页码:241107/1-241107/5 |
| 通讯作者邮箱 | tbwei@semi.ac.cn |
| ISSN号 | 0003-6951 |
| 产权排序 | [Wu, Kui; Wei, Tongbo; Wei, Xuecheng; Zheng, Haiyang; Chen, Yu; Lu, Hongxi; Wang, Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China; [Wu, Kui; Luo, Yi] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China; [Lan, Ding] Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China; [Huang, Kai] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215000, Peoples R China |
| 通讯作者 | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China. |
| 合作状况 | 国内 |
| 中文摘要 | We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires. |
| 英文摘要 | We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO2 mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the {10 (1) over bar1} planes towards the substrate and the perpendicular direction to the {10 (1) over bar1} planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires. (C) 2013 AIP Publishing LLC. |
| 学科主题 | 交叉与边缘领域的力学 |
| 分类号 | 一类 |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 收录类别 | SCI |
| 资助信息 | National Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A103, 2011AA03A105] |
| 原文出处 | http://dx.doi.org/10.1063/1.4840137 |
| 语种 | 英语 |
| WOS记录号 | WOS:000328706500007 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/47735]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China 2.Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China 3.Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China 4.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Kui,Wei, Tongbo,Lan, Ding,et al. Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography[J]. APPLIED PHYSICS LETTERS,2013,103(24):241107/1-241107/5. |
| APA | Wu, Kui.,Wei, Tongbo.,Lan, Ding.,Wei, Xuecheng.,Zheng, Haiyang.,...&Li, Jinmin.(2013).Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography.APPLIED PHYSICS LETTERS,103(24),241107/1-241107/5. |
| MLA | Wu, Kui,et al."Phosphor-free nanopyramid white light-emitting diodes grown on {10(1)over-bar1} planes using nanospherical-lens photolithography".APPLIED PHYSICS LETTERS 103.24(2013):241107/1-241107/5. |
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来源：力学研究所
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