InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection
文献类型：期刊论文
| 作者 | Xin, Liwei1,3; Wang, Tao1 ; Yang, Jin1,3; Wang, Jingwei1; Yin, Fei1; Hu, Yanan1,3; Jiao, Guohua1; Zhang, Lichen1,3; Yin, Jingzhi2; Song, Zhenyu2
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| 刊名 | optoelectronics and advanced materials-rapid communications
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| 出版日期 | 2011-09-01 |
| 卷号 | 5期号:9页码:1017-1020 |
| 关键词 | B1.InAs/GaSb A3.superlattices A3.source flux control A3.MOCVD A1.PL spectra |
| ISSN号 | 1842-6573 |
| 产权排序 | 1 |
| 合作状况 | 国际 |
| 英文摘要 | recently, many characteristics of the inas/gasb type-ii superlattice(sl) have been investigated. however, little research work has been devoted to the source flux control, which is very important for improving the property of the sl. based on the technology of metal organic chemical vapor deposition (mocvd) on gasb substrate, which has a better cost effectiveness for large-scale production, sl with excellent crystal quality is proposed in this paper. furthermore, the importance of source flux control is analyzed by comparison of the low-temperature photoluminescence (pl) spectra of the sl grown with a special source flux control and that with a simple source flux control. the x-ray diffraction(xrd) data and the surface morphology obtained by atomic force microscopy(afm) show that the sl designed by us has smooth surface, and the peak sense wavelength of the sl is around 10 mu m. |
| WOS标题词 | science & technology ; technology ; physical sciences |
| 类目[WOS] | materials science, multidisciplinary ; optics |
| 研究领域[WOS] | materials science ; optics |
| 关键词[WOS] | optical characterization ; photodiodes |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000297637400028 |
| 公开日期 | 2014-01-07 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/20958]  |
| 专题 | 西安光学精密机械研究所_光电子学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Technol, Xian 710119, Peoples R China 2.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 3.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xin, Liwei,Wang, Tao,Yang, Jin,et al. InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection[J]. optoelectronics and advanced materials-rapid communications,2011,5(9):1017-1020. |
| APA | Xin, Liwei.,Wang, Tao.,Yang, Jin.,Wang, Jingwei.,Yin, Fei.,...&Song, Zhenyu.(2011).InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection.optoelectronics and advanced materials-rapid communications,5(9),1017-1020. |
| MLA | Xin, Liwei,et al."InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection".optoelectronics and advanced materials-rapid communications 5.9(2011):1017-1020. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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