Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
文献类型：期刊论文
| 作者 | Ren, GQ(任国强) ; Xu, K(徐科); Su, XJ(苏旭军); Yang, H(杨辉); Zhou, TF(周桃飞); Xu, Y(徐俞); Wang, JF(王建峰); Zeng, XH(曾雄辉)
|
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2013-06-01 |
| 卷号 | 372期号:0页码:43-48 |
| 关键词 | Defects Etching Hydride vapor phase epitaxy Nitrides |
| 通讯作者 | Xu, K(徐科) |
| 英文摘要 | A detailed study on electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy is presented. There are two distinctive regions with non-homogeneous electrical and optical properties in N-face of GaN revealed by wet etching, Raman and cathodoluminescence. One region exclusively exhibited stronger donor–acceptor pair emission and higher carrier concentration due to impurity incorporation. A strong red-shift of near band edge emission of ∼24 meV was also observed owing to additional carrier concentration. Furthermore, the activation energy difference of the etching process between the two regions is ∼0.12 eV. The distinctive etching topography was probably due to the difference of surface potentials related to the level of carrier concentration in GaN. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000319052400007 |
| 公开日期 | 2014-01-12 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1280]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Xu, K(徐科) |
| 推荐引用方式 GB/T 7714 | Ren, GQ,Xu, K,Su, XJ,et al. Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2013,372(0):43-48. |
| APA | Ren, GQ.,Xu, K.,Su, XJ.,Yang, H.,Zhou, TF.,...&Zeng, XH.(2013).Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,372(0),43-48. |
| MLA | Ren, GQ,et al."Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 372.0(2013):43-48. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。