Hot-Filament-Assisted Growth of Straight SiOx Nanowires for Optoelectronic Application
文献类型：期刊论文
| 作者 | Niu, MT(牛牧童) ; Zhang, JP(张锦平)
|
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2013-07-11 |
| 卷号 | 117期号:27页码:14354-14361 |
| 关键词 | AMORPHOUS SILICA NANOWIRES LIQUID-SOLID MECHANISM OXIDE NANOWIRES LOW-TEMPERATURE TUNGSTEN-OXIDE PHOTOLUMINESCENCE PROPERTIES MOLTEN GALLIUM LARGE-SCALE NANOTUBES CATALYST |
| 通讯作者 | Jiang, ZM |
| 英文摘要 | Uniform and straight amorphous SiOx nanowires with a length of several micrometers and, an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000321883600070 |
| 公开日期 | 2014-01-13 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1327]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Niu, MT,Zhang, JP. Hot-Filament-Assisted Growth of Straight SiOx Nanowires for Optoelectronic Application[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2013,117(27):14354-14361. |
| APA | Niu, MT,&Zhang, JP.(2013).Hot-Filament-Assisted Growth of Straight SiOx Nanowires for Optoelectronic Application.JOURNAL OF PHYSICAL CHEMISTRY C,117(27),14354-14361. |
| MLA | Niu, MT,et al."Hot-Filament-Assisted Growth of Straight SiOx Nanowires for Optoelectronic Application".JOURNAL OF PHYSICAL CHEMISTRY C 117.27(2013):14354-14361. |
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