Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques
文献类型:期刊论文
作者 | Ren, GQ(任国强)![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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出版日期 | 2013-05-22 |
卷号 | 46期号:20 |
关键词 | VAPOR-PHASE EPITAXY THIN-FILMS RAMAN-SCATTERING ORGANIC-SOLIDS GROWTH ABLATION FEMTOSECOND LAYERS |
通讯作者 | Su, XJ(苏旭军) |
英文摘要 | A study on brittle cracking in GaN films processed by laser lift-off is presented. Two kinds of cracks were found in the N-polar face of GaN after the laser lift-off process, namely perpendicular cracks along the {1-1 0 0} planes and lateral cracks along the (0 0 0-1) plane, respectively. Single-shot laser damage is studied to understand the cracking mechanism. The damage morphology indicates that the GaN material on the edge of the laser ablation area experiences three loading modes: shear stress P-S, longitudinal compressive stress P-L and transverse tensile stress P-T. Under shock P-L, lateral cracks likely appear and extend from the illuminated region along the interface in mode I. Furthermore, two different kinds of perpendicular cracks were found, namely shear cracks (PC I) and deflection cracks (PC II). A strong P-S gives rise to PC I while a cooperative action of P-L and P-T results in PC II. In addition, there exist a critical effective spot size d(Pth) and a critical ratio of the laser spot size d(L) to the effective spot size d(P), when cracks occur over them. |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000318546100006 |
公开日期 | 2014-01-15 |
源URL | [http://ir.sinano.ac.cn/handle/332007/1418] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
通讯作者 | Su, XJ(苏旭军) |
推荐引用方式 GB/T 7714 | Ren, GQ,Xu, Y,Yang, H,et al. Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2013,46(20). |
APA | Ren, GQ,Xu, Y,Yang, H,Wang, JF,Xu, K,&Su, XJ.(2013).Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques.JOURNAL OF PHYSICS D-APPLIED PHYSICS,46(20). |
MLA | Ren, GQ,et al."Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques".JOURNAL OF PHYSICS D-APPLIED PHYSICS 46.20(2013). |
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