Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors
文献类型：期刊论文
| 作者 | Zhang, BS(张宝顺) ; Xing, Z(邢政); Fan, YM(樊英民); Fu, K(付凯); Wang, RX(王荣新)
|
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2013-02-28 |
| 卷号 | 113期号:8 |
| 通讯作者 | Wang, RX(王荣新) |
| 英文摘要 | Metal-semiconductor-metal ultraviolet photodetectors were fabricated by using the sputtered Ga-doped ZnO (GZO) thin films on sapphire substrate as an active layer. Current-voltage (I-V) and opto-electrical characteristics of the devices were investigated. It is found that the peak optical responsivity of the devices can be significantly improved by selecting appropriate thermal annealing temperature, i.e., from 12.0 A/W (annealed at 500 °C) and 54.0 A/W (700 °C). Furthermore, dark current of the devices drops by two orders of magnitude after annealing process. The significant improvement in performance of the device is ascribed to the removal of massive defect centers of the GZO thin films and increase of Schottky barrier height between the GZO and metal electrodes after thermal annealing at appropriate temperatures. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000315667500077 |
| 公开日期 | 2014-01-13 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/1328]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 通讯作者 | Wang, RX(王荣新) |
| 推荐引用方式 GB/T 7714 | Zhang, BS,Xing, Z,Fan, YM,et al. Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors[J]. JOURNAL OF APPLIED PHYSICS,2013,113(8). |
| APA | Zhang, BS,Xing, Z,Fan, YM,Fu, K,&Wang, RX.(2013).Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors.JOURNAL OF APPLIED PHYSICS,113(8). |
| MLA | Zhang, BS,et al."Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors".JOURNAL OF APPLIED PHYSICS 113.8(2013). |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。