中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structural modifications of GaN after cerium implantation

文献类型:期刊论文

作者Majid, A ; al Hassan, N ; Zhu, JJ(朱建军) ; Shakoor, A
刊名JOURNAL OF RAMAN SPECTROSCOPY
出版日期2013-01
卷号44期号:1页码:136-141
关键词GaN ion implantation rare earth lattice expansion Raman scattering
通讯作者Majid, A
英文摘要Among the family of rare earth (RE) dopants, the doping of first member Ce into GaN is the least studied system. This article reports structure properties of Ce-doped GaN realized by technique of ion implantation. Ce ions were implanted into metal organic chemical vapor deposition grown n- and p-GaN/sapphire thin films at doses 3 x 10(14) and 2 x 10(15) cm(-2). X-ray diffraction scans and Raman scattering measurements exhibited expansion of lattice in the implanted portion of the samples. First order Raman scattering spectra show appearance of several disorder-activated Raman scattering modes in addition to typical GaN features. A dose-dependent decrease in intensity of E2 mode was observed in Raman the spectra of the implanted samples. Ultraviolet Raman spectra of implanted samples show complete quenching of photoluminescence emission and appearance of multiple A1(LO) phonon scattering modes up to fifth order. Moreover, a decrease in intensity and an increase in line width of LO modes as a function of wavenumber were observed for implanted samples
收录类别SCI
语种英语
WOS记录号WOS:000313595500022
公开日期2014-01-15
源URL[http://ir.sinano.ac.cn/handle/332007/1407]  
专题苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式
GB/T 7714
Majid, A,al Hassan, N,Zhu, JJ,et al. Structural modifications of GaN after cerium implantation[J]. JOURNAL OF RAMAN SPECTROSCOPY,2013,44(1):136-141.
APA Majid, A,al Hassan, N,Zhu, JJ,&Shakoor, A.(2013).Structural modifications of GaN after cerium implantation.JOURNAL OF RAMAN SPECTROSCOPY,44(1),136-141.
MLA Majid, A,et al."Structural modifications of GaN after cerium implantation".JOURNAL OF RAMAN SPECTROSCOPY 44.1(2013):136-141.

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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