1/f noise in MgO double-barrier magnetic tunnel junctions
文献类型:期刊论文
作者 | Yu, GQ ; Diao, Z ; Feng, JF ; Kurt, H ; Han, XF ; Coey, JMD |
刊名 | APPLIED PHYSICS LETTERS
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出版日期 | 2011 |
卷号 | 98期号:11 |
关键词 | BIAS VOLTAGE ROOM-TEMPERATURE MAGNETORESISTANCE |
ISSN号 | 0003-6951 |
通讯作者 | Yu, GQ: Trinity Coll Dublin, CRANN, Dublin 2, Ireland. |
中文摘要 | Low frequency noise has been investigated in MgO double-barrier magnetic tunnel junctions (DMTJs) with tunneling magnetoresistance (TMR) ratios up to 250% at room temperature. The noise shows a 1/f frequency spectrum and the minimum of the noise magnitude parameter is 1.2 x 10(-10) mu m(2) in the parallel state for DMTJs annealed at 375 degrees C. The bias dependence of noise and TMR suggests that DMTJs with MgO barriers can be useful for magnetic field sensor applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562951] |
收录类别 | SCI |
资助信息 | SFI [2005/IN/1850];Irish Governmen |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/32620] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yu, GQ,Diao, Z,Feng, JF,et al. 1/f noise in MgO double-barrier magnetic tunnel junctions[J]. APPLIED PHYSICS LETTERS,2011,98(11). |
APA | Yu, GQ,Diao, Z,Feng, JF,Kurt, H,Han, XF,&Coey, JMD.(2011).1/f noise in MgO double-barrier magnetic tunnel junctions.APPLIED PHYSICS LETTERS,98(11). |
MLA | Yu, GQ,et al."1/f noise in MgO double-barrier magnetic tunnel junctions".APPLIED PHYSICS LETTERS 98.11(2011). |
入库方式: OAI收割
来源:物理研究所
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