中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
1/f noise in MgO double-barrier magnetic tunnel junctions

文献类型:期刊论文

作者Yu, GQ ; Diao, Z ; Feng, JF ; Kurt, H ; Han, XF ; Coey, JMD
刊名APPLIED PHYSICS LETTERS
出版日期2011
卷号98期号:11
关键词BIAS VOLTAGE ROOM-TEMPERATURE MAGNETORESISTANCE
ISSN号0003-6951
通讯作者Yu, GQ: Trinity Coll Dublin, CRANN, Dublin 2, Ireland.
中文摘要Low frequency noise has been investigated in MgO double-barrier magnetic tunnel junctions (DMTJs) with tunneling magnetoresistance (TMR) ratios up to 250% at room temperature. The noise shows a 1/f frequency spectrum and the minimum of the noise magnitude parameter is 1.2 x 10(-10) mu m(2) in the parallel state for DMTJs annealed at 375 degrees C. The bias dependence of noise and TMR suggests that DMTJs with MgO barriers can be useful for magnetic field sensor applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562951]
收录类别SCI
资助信息SFI [2005/IN/1850];Irish Governmen
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/32620]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yu, GQ,Diao, Z,Feng, JF,et al. 1/f noise in MgO double-barrier magnetic tunnel junctions[J]. APPLIED PHYSICS LETTERS,2011,98(11).
APA Yu, GQ,Diao, Z,Feng, JF,Kurt, H,Han, XF,&Coey, JMD.(2011).1/f noise in MgO double-barrier magnetic tunnel junctions.APPLIED PHYSICS LETTERS,98(11).
MLA Yu, GQ,et al."1/f noise in MgO double-barrier magnetic tunnel junctions".APPLIED PHYSICS LETTERS 98.11(2011).

入库方式: OAI收割

来源:物理研究所

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