86% TMR at 4.2 K for amorphous magnetic-tunnel-junctions with Co60Fe20B20 as free and pinned layers
文献类型：期刊论文
| 作者 | Li, FF ; Han, XF ; Jiang, LX ; Zhao, J ; Wang, L ; Sharif, R |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2005 |
| 卷号 | 21期号:3页码:289 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES MAGNETORESISTANCE TEMPERATURE MAGNON FILMS |
| ISSN号 | 1005-0302 |
| 通讯作者 | Han, XF: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Single barrier magnetic-tunnel-junctions (MTJs) with the layer structure of Ta(5)/Cu(30)/Ta(5)/Ni79Fe21(5)/Ir-22 Mn-78(12)/Co60Fe20B20(4)/Al(0.8)-oxide/Co60Fe20B20(4)/Cu(30)/Ta(5) [thickness unit: nm] using the amorphous Co60Fe20B20 alloy as free and pinned layers were micro-fabricated. The experimental investigations showed that the tunnel magnetoresistance (TMR) ratio and the resistance decrease with increasing dc bias voltage from 0 to 500 mV or with increasing temperature from 4.2 K to RT. A high TMR ratio of 86.2% at 4.2 K, which corresponds to the high spin polarization Of Co60Fe20B20, 55%, was observed in the MTJs after annealing at 270° C for 1 h. High TMR ratio of 53.1%, low junction resistance-area product RS of 3.56 k&UOmega;/μ m(2), small coercivity H-C of ≤ 4 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V-1/2 of greater than 570 mV at RT have been achieved in such Co-Fe-B MTJs. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/32806]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, FF,Han, XF,Jiang, LX,et al. 86% TMR at 4.2 K for amorphous magnetic-tunnel-junctions with Co60Fe20B20 as free and pinned layers[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2005,21(3):289. |
| APA | Li, FF,Han, XF,Jiang, LX,Zhao, J,Wang, L,&Sharif, R.(2005).86% TMR at 4.2 K for amorphous magnetic-tunnel-junctions with Co60Fe20B20 as free and pinned layers.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,21(3),289. |
| MLA | Li, FF,et al."86% TMR at 4.2 K for amorphous magnetic-tunnel-junctions with Co60Fe20B20 as free and pinned layers".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 21.3(2005):289. |
入库方式： OAI收割
来源：物理研究所
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