A buffer layer for ZnO film growth on sapphire
文献类型：期刊论文
| 作者 | Zheng, K ; Guo, QL ; Wang, EG |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 2008 |
| 卷号 | 602期号:14页码:2600 |
| 关键词 | MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION ASSISTED MBE GROWTH IRON-OXIDE LAYERS THIN-FILMS GAN ALPHA-AL2O3(0001) HETEROEPITAXY SUBSTRATE QUALITY |
| ISSN号 | 0039-6028 |
| 通讯作者 | Guo, QL: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | An ultra-thin layer of Fe3O4, with a roughly ordered (1 1 1) face, prepared on a Mo(1 1 0) substrate has been used to grow ZnO films under ultra high vacuum condition. In situ X-ray photoelectron spectroscopy and low energy electron diffraction indicate that the ZnO(0 0 0 1) films, with marginal ordering, are epitaxially grown on the Fe3O4(1 1 1) surface. Compared with MgO(1 1 1) layer used to grow ZnO on sapphire, the Fe3O4(1 1 1) might be a better buffer layer owing to the fact that Fe3O4(1 1 1) surface is more thermodynamically stable. In consideration of lattice match and symmetry as well as thermal stability, we predict that both Fe2O3(0 0 0 1) and FeO(1 1 1) layers are also good candidates as buffer layers for ZnO(0 0 0 1) growth on sapphire (0 0 0 1) surface. 2008 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China [10574153, 60621091]; CAS |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/32846]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zheng, K,Guo, QL,Wang, EG. A buffer layer for ZnO film growth on sapphire[J]. SURFACE SCIENCE,2008,602(14):2600. |
| APA | Zheng, K,Guo, QL,&Wang, EG.(2008).A buffer layer for ZnO film growth on sapphire.SURFACE SCIENCE,602(14),2600. |
| MLA | Zheng, K,et al."A buffer layer for ZnO film growth on sapphire".SURFACE SCIENCE 602.14(2008):2600. |
入库方式： OAI收割
来源：物理研究所
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