A method of studying dislocation core structures by high-resolution electron microscopy
文献类型：期刊论文
| 作者 | Li, FH |
| 刊名 | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
 |
| 出版日期 | 2005 |
| 卷号 | 6期号:7页码:755 |
| 关键词 | IMAGE DECONVOLUTION HREM RECONSTRUCTION MICROGRAPHS EXTENSION CRYSTALS COMPLEX |
| ISSN号 | 1468-6996 |
| 通讯作者 | Li, FH: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A method to study the crystal defects at atomic level by high-resolution electron microscopy (HREM) is introduced. The image taken with a field-emission high-resolution electron microscope and not directly reflecting the examined crystal structure can be transformed into the structure image by means of image deconvolution in combination with dynamical scattering effect correction. The principle of image deconvolution and the procedure of technique are briefly introduced. The results of applications on the epilayer Of Si0.76Ge0.24/Si are given. It is shown that atoms in the dislocation core structures have been distinguished individually in the deconvoluted images and the point resolution of images can be improved Lip to the information limit of the field-emission high-resolution electron microscope. (c) 2005 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/32979]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, FH. A method of studying dislocation core structures by high-resolution electron microscopy[J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,2005,6(7):755. |
| APA | Li, FH.(2005).A method of studying dislocation core structures by high-resolution electron microscopy.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,6(7),755. |
| MLA | Li, FH."A method of studying dislocation core structures by high-resolution electron microscopy".SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 6.7(2005):755. |
入库方式： OAI收割
来源：物理研究所
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