A novel design and fabrication of magnetic random access memory based on nano-ring-type magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Han, XF ; Wei, HX ; Peng, ZL ; Yang, HD ; Feng, JF ; Du, GX ; Sun, ZB ; Jiang, LX ; Ma, M ; Wang, Y ; Wen, ZC ; Liu, DP ; Zhan, WS |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
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| 出版日期 | 2007 |
| 卷号 | 23期号:3页码:304 |
| ISSN号 | 1005-0302 |
| 中文摘要 | Nano-ring-type magnetic tunnel junctions (NR-MTJs) with the layer structure of Ta(5)/Ir22Mn78(10)/Co75Fe25(2)/Ru(0.75)/Co60Fe20B20(3)/AI(0.6)-oxide/Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness unit: nm) were nano-fabricated on the Si(100)/SiO2 substrate using magnetron sputtering deposition combined with the optical. lithography, electron beam lithography (EBL) and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance (TMR & R) versus driving current (I) loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co60Fe20B20 layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch(2) even 6 Gbite/inch(2) are possible using both 1 NR-MTJ+l transistor structure and current switching mechanism based on based on our fabricated 4x4 MRAM demo devices. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33126]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, XF,Wei, HX,Peng, ZL,et al. A novel design and fabrication of magnetic random access memory based on nano-ring-type magnetic tunnel junctions[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2007,23(3):304. |
| APA | Han, XF.,Wei, HX.,Peng, ZL.,Yang, HD.,Feng, JF.,...&Zhan, WS.(2007).A novel design and fabrication of magnetic random access memory based on nano-ring-type magnetic tunnel junctions.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,23(3),304. |
| MLA | Han, XF,et al."A novel design and fabrication of magnetic random access memory based on nano-ring-type magnetic tunnel junctions".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 23.3(2007):304. |
入库方式： OAI收割
来源：物理研究所
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