A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Ji, LW ; Su, YK ; Chang, SJ ; Wu, LW ; Fang, TH ; Xue, QK ; Lai, WC ; Chiou, YZ |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 57期号:26-27页码:4218 |
| 关键词 | LIGHT-EMITTING-DIODES MOLECULAR-BEAM EPITAXY WELL BLUE GAN SURFACES GROWTH EMISSION SI |
| ISSN号 | 0167-577X |
| 通讯作者 | Ji, LW: Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan. |
| 中文摘要 | An in situ bending-plate method is used to measure intrinsic stress during the growth process of nanocrystalline-diamond film. Nanometer-sized diamond film is prepared by continuous H+ ion bombardment under different energies induced by applying a negative-bias voltage at the substrate relative to the grounded-vacuum chamber using the microwave-plasma, chemical-vapor-deposition (MWPCVD) method. The effects of substrate-bias voltage, temperature, total pressure, and CH4 concentration on intrinsic stress during the film-growth process are investigated. The results indicate that high bias voltage and high substrate temperature are beneficial when synthesizing smooth nanocrystalline-diamond film. This film usually relates to high intrinsic compressive stress. This stress can be attributed to the high secondary-nucleation rate and grain-boundary density. The evolution of intrinsic stress presents a complicated process at different pressures and CH4 concentrations. The compressive stress of the film can be controlled by modifying the grain size at various deposition parameters. (C) 2003 American Vacuum Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33137]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ji, LW,Su, YK,Chang, SJ,et al. A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition[J]. MATERIALS LETTERS,2003,57(26-27):4218. |
| APA | Ji, LW.,Su, YK.,Chang, SJ.,Wu, LW.,Fang, TH.,...&Chiou, YZ.(2003).A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition.MATERIALS LETTERS,57(26-27),4218. |
| MLA | Ji, LW,et al."A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition".MATERIALS LETTERS 57.26-27(2003):4218. |
入库方式： OAI收割
来源：物理研究所
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