中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIAL STEPS AT IN0.2GA0.8AS/GAAS INTERFACE

文献类型:期刊论文

作者JIANG, J ; ZHOU, XC ; DU, AY ; PENG, LM ; WANG, E ; MU, SM ; ZHONG, ZT
刊名SUPERLATTICES AND MICROSTRUCTURES
出版日期1993
卷号13期号:3页码:379
关键词REFLECTION ELECTRON-MICROSCOPY STRAINED-LAYER SUPERLATTICES IMAGE-CONTRAST DIFFRACTION SURFACE WELLS
ISSN号0749-6036
通讯作者JIANG, J: CHINESE ACAD SCI,SURFACE PHYS LAB,POB 603-8,BEIJING 100080,PEOPLES R CHINA.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/33196]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
JIANG, J,ZHOU, XC,DU, AY,et al. A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIAL STEPS AT IN0.2GA0.8AS/GAAS INTERFACE[J]. SUPERLATTICES AND MICROSTRUCTURES,1993,13(3):379.
APA JIANG, J.,ZHOU, XC.,DU, AY.,PENG, LM.,WANG, E.,...&ZHONG, ZT.(1993).A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIAL STEPS AT IN0.2GA0.8AS/GAAS INTERFACE.SUPERLATTICES AND MICROSTRUCTURES,13(3),379.
MLA JIANG, J,et al."A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIAL STEPS AT IN0.2GA0.8AS/GAAS INTERFACE".SUPERLATTICES AND MICROSTRUCTURES 13.3(1993):379.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。