A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
文献类型：期刊论文
| 作者 | Jiang, AQ ; Wang, C ; Jin, KJ ; Liu, XB ; Scott, JF ; Hwang, CS ; Tang, TA ; Bin Lu, H ; Yang, GZ |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2011 |
| 卷号 | 23期号:10页码:1277 |
| 关键词 | FERROELECTRIC MEMORY MULTIFERROIC BIFEO3 ELECTRORESISTANCE CONDUCTION DIODE |
| ISSN号 | 0935-9648 |
| 通讯作者 | Jiang, AQ: Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. |
| 中文摘要 | A ferroelectric-resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/ off ratio to permit ordinary sense amplifiers to measure "1" or " 0", and is fully compatible with complementary metal- oxide semiconductor processing. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10874226]; National Basic Research Program of China, Shanghai Key Program [1052nm07600]; Program for Professor of Special Appointment (Eastern Scholar) at Shanghai.; Converging Research Center [2009-0081961]; Ministry of Education, Science and Technology [R31-2008-000-10075-0] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33200]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, AQ,Wang, C,Jin, KJ,et al. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors[J]. ADVANCED MATERIALS,2011,23(10):1277. |
| APA | Jiang, AQ.,Wang, C.,Jin, KJ.,Liu, XB.,Scott, JF.,...&Yang, GZ.(2011).A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors.ADVANCED MATERIALS,23(10),1277. |
| MLA | Jiang, AQ,et al."A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors".ADVANCED MATERIALS 23.10(2011):1277. |
入库方式： OAI收割
来源：物理研究所
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