中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A simple method for studing the electron transport properties in the magnetic tunnel junction with an arbitrary barrier shape

文献类型:期刊论文

作者Xie, ZW ; Li, BZ
刊名ACTA PHYSICA SINICA
出版日期2002
卷号51期号:2页码:399
关键词LARGE MAGNETORESISTANCE TEMPERATURE-DEPENDENCE SPIN-POLARIZATION FIELD
ISSN号1000-3290
通讯作者Xie, ZW: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Based on the Slonczewski's free electron model, we present a simple method that can he used to study the electron transport properties in a magnetic tunnel junction with an arbitrary barrier shape. As examples, the TMR for three familiar barrier shapes, i.e., the trapezoidal barrier, the barrier with mirror potential taken into account, and the parabolic barrier, has been calculated.
收录类别SCI
语种中文
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/33224]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Xie, ZW,Li, BZ. A simple method for studing the electron transport properties in the magnetic tunnel junction with an arbitrary barrier shape[J]. ACTA PHYSICA SINICA,2002,51(2):399.
APA Xie, ZW,&Li, BZ.(2002).A simple method for studing the electron transport properties in the magnetic tunnel junction with an arbitrary barrier shape.ACTA PHYSICA SINICA,51(2),399.
MLA Xie, ZW,et al."A simple method for studing the electron transport properties in the magnetic tunnel junction with an arbitrary barrier shape".ACTA PHYSICA SINICA 51.2(2002):399.

入库方式: OAI收割

来源:物理研究所

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