A TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF TITANIUM SILICIDES FABRICATED BY IMPLANTATION OF TITANIUM INTO SILICON AND THERMAL ANNEALING
文献类型：期刊论文
| 作者 | JIN, S ; WEN, XY ; ZHANG, Z |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 1994 |
| 卷号 | 249期号:1页码:50 |
| 关键词 | (111)SI TISI2 |
| ISSN号 | 0040-6090 |
| 通讯作者 | JIN, S: CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,POB 2724,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | Titanium silicide has been formed by ion implantation of titanium into high purity silicon (111) and thermally annealed in ambient Ar. Cross-sectional transmission electron microscopy (XTEM) shows that the silicon annealed at 1000 degrees C consists of three parts: an intermittent C54-TiSi2 layer, a region of buried C49-TiSi2 precipitates and a residual radiation- damaged zone. For the sample annealed at 700 degrees C there is a continuous C54-TiSi2 layer and a zone of buried crystals below the silicide layer. After thermal annealing at 800 degrees C for 30 min, only a continuous C54-TiSi2 layer is present in the silicon substrate surface and its orientation relationships are determined as [121]C54-TiSi2 parallel to[110]Si and (111)C54-TiSi2 parallel to(111)Si. High resolution electron microscopy (HREM) reveals that there is a transition layer which may relax the strain caused by the lattice misfit between the C54-TiSi2 film and the silicon substrate. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33324]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | JIN, S,WEN, XY,ZHANG, Z. A TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF TITANIUM SILICIDES FABRICATED BY IMPLANTATION OF TITANIUM INTO SILICON AND THERMAL ANNEALING[J]. THIN SOLID FILMS,1994,249(1):50. |
| APA | JIN, S,WEN, XY,&ZHANG, Z.(1994).A TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF TITANIUM SILICIDES FABRICATED BY IMPLANTATION OF TITANIUM INTO SILICON AND THERMAL ANNEALING.THIN SOLID FILMS,249(1),50. |
| MLA | JIN, S,et al."A TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF TITANIUM SILICIDES FABRICATED BY IMPLANTATION OF TITANIUM INTO SILICON AND THERMAL ANNEALING".THIN SOLID FILMS 249.1(1994):50. |
入库方式： OAI收割
来源：物理研究所
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