中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Accurate measurements of crystal structure factors using a FEG electron microscope

文献类型:期刊论文

作者Ren, G ; Zuo, JM ; Peng, LM
刊名MICRON
出版日期1997
卷号28期号:6页码:459
关键词DIFFRACTION REFINEMENT PATTERNS SILICON
ISSN号0968-4328
通讯作者Ren, G: Chinese Acad Sci, Beijing Lab Electron Microscopy, POB 2724, Beijing 100080, Peoples R China.
中文摘要An experimental procedure for the accurate measurement of crystal structure factors is described. This procedure is based on the use of a field emission gun electron microscope equipped with a Gatan Imaging Filter (GIF) system. The slow-scan CCD camera of the GIF system is first characterized and a constrained least squares restoration scheme is used for the deconvolution of the experimentally recorded raw elastic CBED patterns. The procedure has been applied for the accurate measurement of the (111) and (222) structure factors of silicon single crystal. A residual chi(2) value of 2.87 is achieved and the determined structure factors agree well with previous measurements using X-ray and electron diffraction techniques. (C) 1997 Elsevier Science Ltd. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/33458]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Ren, G,Zuo, JM,Peng, LM. Accurate measurements of crystal structure factors using a FEG electron microscope[J]. MICRON,1997,28(6):459.
APA Ren, G,Zuo, JM,&Peng, LM.(1997).Accurate measurements of crystal structure factors using a FEG electron microscope.MICRON,28(6),459.
MLA Ren, G,et al."Accurate measurements of crystal structure factors using a FEG electron microscope".MICRON 28.6(1997):459.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。