Adjustable nitrogen-vacancy induced magnetism in AlN
文献类型:期刊论文
作者 | Liu, Y ; Jiang, LB ; Wang, G ; Zuo, SB ; Wang, WJ ; Chen, XL |
刊名 | APPLIED PHYSICS LETTERS
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出版日期 | 2012 |
卷号 | 100期号:12 |
关键词 | FERROMAGNETIC PROPERTIES GROWTH FILMS |
ISSN号 | 0003-6951 |
通讯作者 | Liu, Y: Chinese Acad Sci, Res & Dev Ctr Funct Crystals, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
中文摘要 | Nitrogen-vacancy-induced magnetism in AlN is investigated both theoretically and experimentally. First-principles calculations reveal that magnetic coupling between the vacancy-induced moments varies with the vacancy concentration. A sizable ferromagnetic coupling for nitrogen vacancies is found. Experimentally, the magnetism manipulation is realized accordingly by introducing vacancies through varying the nitrogen atmosphere in AlN whiskers. The vacancy control may be applicable to other III-V nitride semiconductors in tuning their magnetism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3696023] |
收录类别 | SCI |
资助信息 | National Natural Science Foundation of China [51072222, 90922037, 51172270]; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences [2010KL009]; Beijing Nova Program [2011096] |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/33488] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Liu, Y,Jiang, LB,Wang, G,et al. Adjustable nitrogen-vacancy induced magnetism in AlN[J]. APPLIED PHYSICS LETTERS,2012,100(12). |
APA | Liu, Y,Jiang, LB,Wang, G,Zuo, SB,Wang, WJ,&Chen, XL.(2012).Adjustable nitrogen-vacancy induced magnetism in AlN.APPLIED PHYSICS LETTERS,100(12). |
MLA | Liu, Y,et al."Adjustable nitrogen-vacancy induced magnetism in AlN".APPLIED PHYSICS LETTERS 100.12(2012). |
入库方式: OAI收割
来源:物理研究所
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