中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Adjustable nitrogen-vacancy induced magnetism in AlN

文献类型:期刊论文

作者Liu, Y ; Jiang, LB ; Wang, G ; Zuo, SB ; Wang, WJ ; Chen, XL
刊名APPLIED PHYSICS LETTERS
出版日期2012
卷号100期号:12
关键词FERROMAGNETIC PROPERTIES GROWTH FILMS
ISSN号0003-6951
通讯作者Liu, Y: Chinese Acad Sci, Res & Dev Ctr Funct Crystals, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要Nitrogen-vacancy-induced magnetism in AlN is investigated both theoretically and experimentally. First-principles calculations reveal that magnetic coupling between the vacancy-induced moments varies with the vacancy concentration. A sizable ferromagnetic coupling for nitrogen vacancies is found. Experimentally, the magnetism manipulation is realized accordingly by introducing vacancies through varying the nitrogen atmosphere in AlN whiskers. The vacancy control may be applicable to other III-V nitride semiconductors in tuning their magnetism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3696023]
收录类别SCI
资助信息National Natural Science Foundation of China [51072222, 90922037, 51172270]; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences [2010KL009]; Beijing Nova Program [2011096]
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/33488]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, Y,Jiang, LB,Wang, G,et al. Adjustable nitrogen-vacancy induced magnetism in AlN[J]. APPLIED PHYSICS LETTERS,2012,100(12).
APA Liu, Y,Jiang, LB,Wang, G,Zuo, SB,Wang, WJ,&Chen, XL.(2012).Adjustable nitrogen-vacancy induced magnetism in AlN.APPLIED PHYSICS LETTERS,100(12).
MLA Liu, Y,et al."Adjustable nitrogen-vacancy induced magnetism in AlN".APPLIED PHYSICS LETTERS 100.12(2012).

入库方式: OAI收割

来源:物理研究所

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