Adsorption of Al on Si(100) at high temperature
文献类型：期刊论文
| 作者 | Zhu, CX ; Kawazu, A ; Misawa, S ; Tsukahara, S |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 1999 |
| 卷号 | 59期号:15页码:9760 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY SURFACE-STRUCTURES GROWTH RECONSTRUCTION PHASES |
| ISSN号 | 0163-1829 |
| 通讯作者 | Zhu, CX: Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | The compound Sr14Cu24O41 has a unique structure. It consists of an alternating stack of the plane containing edge-sharing CuO2 chains, and the plane containing two-leg Cu2O3 ladders sandwiched by Sr layers. The CuO2 chain also has a singlet ground state originating from a dimerization. The dimerized state in the chain depends critically on the number of holes. The effect of La substitution for Sr on the CuO2 chain spin gap is investigated by measuring the magnetic susceptibility of Sr14-xLaxCu24O41 with x less than or equal to 1. Due to the large spin gap, the Cu2O3 plane is magnetically inert below room temperature. For x=0, the susceptibility shows a characteristic decrease below 80 K, followed by an upturn below 20 K due to a Curie contribution. After subtracting the Curie term, the susceptibility is fitted by a dimer description. The dimer number N-D=1.45 and the dimer coupling constant J(D)=139 K are obtained. With increasing La content, both N-D and J(D) decrease gradually, indicating the weakening of the antiferromagnetic interaction between Cu2+ spins in the CuO2 chain. The Curie contribution enhances at the same time, and the gap feature becomes gradually smeared. It is difficult to fit the data when x=1.0. (C) 1999 American Institute of Physics. [S0021-8979(99)16308-4]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33499]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, CX,Kawazu, A,Misawa, S,et al. Adsorption of Al on Si(100) at high temperature[J]. PHYSICAL REVIEW B,1999,59(15):9760. |
| APA | Zhu, CX,Kawazu, A,Misawa, S,&Tsukahara, S.(1999).Adsorption of Al on Si(100) at high temperature.PHYSICAL REVIEW B,59(15),9760. |
| MLA | Zhu, CX,et al."Adsorption of Al on Si(100) at high temperature".PHYSICAL REVIEW B 59.15(1999):9760. |
入库方式： OAI收割
来源：物理研究所
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