中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations

文献类型:期刊论文

作者Liu, EZ ; Wang, CY ; Wang, JT
刊名PHYSICAL REVIEW B
出版日期2006
卷号74期号:7
关键词MEDIATED EPITAXIAL-GROWTH SURFACTANTS
ISSN号1098-0121
通讯作者Liu, EZ: Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.
中文摘要The adsorption and diffusion of Ge adatoms and ad-dimers on the one-monolayer Sb-covered Si(001) surface are studied using first-principles total-energy calculations. It is shown that Ge adatoms and ad-dimers can both break Sb dimers because of the weak bonding of the Sb dimers on Si(001). As a result, the most stable sites are both on the Sb dimer rows for Ge adatoms and ad-dimers, which is in significant contrast to the conventional picture that the most stable site for a Ge ad-dimer is in the trough between the group-V element dimer rows. We have also examined the energetics of the site exchange between Ge and Sb atoms for the surfactant-mediated growth and find that Ge ad-dimers tend to exchange with the subsurface Sb atoms one by one perpendicular to the surface dimer rows.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/33503]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, EZ,Wang, CY,Wang, JT. Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations[J]. PHYSICAL REVIEW B,2006,74(7).
APA Liu, EZ,Wang, CY,&Wang, JT.(2006).Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations.PHYSICAL REVIEW B,74(7).
MLA Liu, EZ,et al."Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations".PHYSICAL REVIEW B 74.7(2006).

入库方式: OAI收割

来源:物理研究所

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