Alloy compositional fluctuation in InAlGaN epitaxial films
文献类型：期刊论文
| 作者 | Li, DB ; Dong, X ; Huang, J ; Liu, X ; Xu, Z ; Zhang, Z ; Wang, Z |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2005 |
| 卷号 | 80期号:3页码:649 |
| 关键词 | MULTIPLE-QUANTUM WELLS ALINGAN/GAN HETEROSTRUCTURES OPTICAL-PROPERTIES QUATERNARY ALLOYS MOLECULAR-BEAM GROWTH INXALYGA1-X-YN |
| ISSN号 | 0947-8396 |
| 通讯作者 | Li, DB: Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | The quaternary InAlGaN films were grown by metal-organic vapor phase epitaxy (MOVPE) at various temperatures and the optical and structural properties of the quaternary films were investigated by temperature-dependent photoluminescence (PL), high-resolution X-ray diffraction (HRXRD) and high-resolution electron microscopy (HREM). The results show that the temperature-dependent PL intensity of the InAlGaN film is similar to that of the disordered alloys, which is thought to be due to local alloy compositional fluctuations (ACF) in the epilayer. HRXRD measurement reveals there are In-rich and In-poor phases in the film and HREM observation, on the other hand, demonstrates that nanoclusters formed in the epilayer. Therefore the experimental results support the existence of ACF in the epilayers. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33566]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, DB,Dong, X,Huang, J,et al. Alloy compositional fluctuation in InAlGaN epitaxial films[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2005,80(3):649. |
| APA | Li, DB.,Dong, X.,Huang, J.,Liu, X.,Xu, Z.,...&Wang, Z.(2005).Alloy compositional fluctuation in InAlGaN epitaxial films.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,80(3),649. |
| MLA | Li, DB,et al."Alloy compositional fluctuation in InAlGaN epitaxial films".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 80.3(2005):649. |
入库方式： OAI收割
来源：物理研究所
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