Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
文献类型：期刊论文
| 作者 | Cheng, LS ; Zhang, GY ; Yu, DP ; Zhang, Z |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1997 |
| 卷号 | 70期号:11页码:1408 |
| 关键词 | AIN BUFFER LAYER FILMS DEPOSITION QUALITY |
| ISSN号 | 0003-6951 |
| 通讯作者 | Cheng, LS: CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | High efficiency self-pumped phase conjugation (SPPC) has been obtained in 45 degrees-cut Ce:BaTiO3. In a wide region of incident angles between -60 degrees and +70 degrees, stable reflectivities greater than 60% at 515 nm have been observed with a maximum reflectivity of 83.5%. The SPPC buildup time was 3 s. We have characterized in detail the photorefractive performance of this special 45 degrees-cut crystal of Ce:BaTiO3 and compared it with the 0 degrees-cut and 45 degrees-cut BaTiO3 crystals as well as the 0 degrees-cut Ce:BaTiO3 crystal. Under certain conditions, two kinds of SPPC formation were observed. The competition between the two kinds of mechanisms caused the SPPC reflectivity to decrease in a corner position of the crystal. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33579]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, LS,Zhang, GY,Yu, DP,et al. Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate[J]. APPLIED PHYSICS LETTERS,1997,70(11):1408. |
| APA | Cheng, LS,Zhang, GY,Yu, DP,&Zhang, Z.(1997).Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate.APPLIED PHYSICS LETTERS,70(11),1408. |
| MLA | Cheng, LS,et al."Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate".APPLIED PHYSICS LETTERS 70.11(1997):1408. |
入库方式： OAI收割
来源：物理研究所
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