Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure
文献类型：期刊论文
| 作者 | Wang, XJ ; Sui, Y ; Tang, JK ; Wang, C ; Zhang, XQ ; Lu, Z ; Liu, ZG ; Su, WH ; Wei, XK ; Yu, RC |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 92期号:1 |
| ISSN号 | 0003-6951 |
| 中文摘要 | Film of Fe(3)O(4) was prepared with laser molecular beam epitaxy deposition on a Si substrate with a native SiO(2) layer. When the temperature is increased above 250 K, the resistance drops rapidly because the conduction path starts to switch from the Fe(3)O(4) film to the inversion layer underneath the SiO(2) via thermally assisted tunneling. A greatly magnified low field negative magnetoresistance of Fe(3)O(4) is observed at 280 K. The effect is similar to a metal-oxide-semiconductor field-effect transistor. The magnetoresistance becomes positive with further increase in the magnetic field due to the Lorentz force and other effects on the carriers in the inversion layer. (C) 2008 American Institute of Physics. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33601]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, XJ,Sui, Y,Tang, JK,et al. Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure[J]. APPLIED PHYSICS LETTERS,2008,92(1). |
| APA | Wang, XJ.,Sui, Y.,Tang, JK.,Wang, C.,Zhang, XQ.,...&Yu, RC.(2008).Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure.APPLIED PHYSICS LETTERS,92(1). |
| MLA | Wang, XJ,et al."Amplification of magnetoresistance of magnetite in an Fe(3)O(4)-SiO(2)-Si structure".APPLIED PHYSICS LETTERS 92.1(2008). |
入库方式： OAI收割
来源：物理研究所
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