An analysis of seed graphitization for sublimation growth of SiC bulk crystal
文献类型：期刊论文
| 作者 | Li, HQ ; Chen, XL ; Ni, DQ ; Wu, X |
| 刊名 | DIAMOND AND RELATED MATERIALS
 |
| 出版日期 | 2004 |
| 卷号 | 13期号:1页码:151 |
| 关键词 | CARBIDE SINGLE-CRYSTALS SILICON-CARBIDE INCLUSIONS CONTAINER |
| ISSN号 | 0925-9635 |
| 通讯作者 | Li, HQ: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A relatively comprehensive analysis of the problem of seed graphitization during seeded sublimation growth of SiC bulk crystal is presented in the paper. It is shown that an intentional thermal etching process for the seed can cause serious seed graphitization due to preferential loss of Si from the seed. A polycrystalline deposit will be formed on the seed after growth if serious seed graphitization occurs. In the case of slight graphitization of the seed, the presence of additional carbon on the seed will act as impurities, making the growth more difficult and even inducing defect formation. Besides, additional carbon can be incorporated into SiC. Two possible mechanisms for this are proposed in the paper. It is suggested to initiate the growth with a relatively low growth rate in order to incorporate additional carbon into SiC as much as possible. Since the main cause for seed graphitization is the preferential loss of Si from the seed, maintaining a high Si pressure near the seed could be a possible solution to avoid seed graphitization. The problem of maintaining a high Si pressure near the seed is discussed in the paper. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33617]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, HQ,Chen, XL,Ni, DQ,et al. An analysis of seed graphitization for sublimation growth of SiC bulk crystal[J]. DIAMOND AND RELATED MATERIALS,2004,13(1):151. |
| APA | Li, HQ,Chen, XL,Ni, DQ,&Wu, X.(2004).An analysis of seed graphitization for sublimation growth of SiC bulk crystal.DIAMOND AND RELATED MATERIALS,13(1),151. |
| MLA | Li, HQ,et al."An analysis of seed graphitization for sublimation growth of SiC bulk crystal".DIAMOND AND RELATED MATERIALS 13.1(2004):151. |
入库方式： OAI收割
来源：物理研究所
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