An Anisotropic Etching Effect in the Graphene Basal Plane
文献类型：期刊论文
| 作者 | Yang, R ; Zhang, LC ; Wang, Y ; Shi, ZW ; Shi, DX ; Gao, HJ ; Wang, EG ; Zhang, GY |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2010 |
| 卷号 | 22期号:36页码:4014 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY ELECTRONIC-PROPERTIES CARBON NANOTUBES LAYER GRAPHENE QUANTUM DOTS NANORIBBONS GRAPHITE STABILITY SIO2 |
| ISSN号 | 0935-9648 |
| 通讯作者 | Zhang, GY: Chinese Acad Sci, Nanoscale Phys & Device Lab, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | A highly controllable, dry, anisotropic etching technique for graphene sheets has been achieved using hydrogen plasma etching. Zigzag edge formation was achieved by starting the etching at edges and defects and depends strongly on crystallographic orientation of the graphene. This dry, anisotropic etching approach combined with the standard lithographic technique is ideal for scalable graphene tailoring because the etching rates can be precisely controlled and the quality of the graphene can be preserved. |
| 收录类别 | SCI |
| 资助信息 | Institute of Physics (IOP); Chinese Academy of Sciences (CAS); Science Foundation of CAS [20091111100202]; National Science Foundation of China (NSFC) [10974226]; National 973 Project of China [2010CB934202] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33621]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, R,Zhang, LC,Wang, Y,et al. An Anisotropic Etching Effect in the Graphene Basal Plane[J]. ADVANCED MATERIALS,2010,22(36):4014. |
| APA | Yang, R.,Zhang, LC.,Wang, Y.,Shi, ZW.,Shi, DX.,...&Zhang, GY.(2010).An Anisotropic Etching Effect in the Graphene Basal Plane.ADVANCED MATERIALS,22(36),4014. |
| MLA | Yang, R,et al."An Anisotropic Etching Effect in the Graphene Basal Plane".ADVANCED MATERIALS 22.36(2010):4014. |
入库方式： OAI收割
来源：物理研究所
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