An explicit function expression for dc bias and temperature dependence of magnetoresistances in magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Han, XF |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2002 |
| 卷号 | 18期号:6页码:497 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES FILMS |
| ISSN号 | 1005-0302 |
| 通讯作者 | Han, XF: Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China. |
| 中文摘要 | An explicit function expression for the bias voltage or/and temperature dependences of tunnel magnetoresistance ratio and resistances were obtained with a unique set of intrinsic parameters. Two of these intrinsic parameters are the Curie temperature T-C and the density of state (DOS) for itinerant majority and minority electrons xi(rho(M)/rho(m)), which are the eigen parameters of ferromagnetic electrodes. Others are the spin-dependent matrix-element ratio (i.e., \T-d\(2)/\T-J\(2)) and the anisotropic-wavelength-cutoff energy E-C(gamma) of spin-wave spectrum in magnetic tunnel junction (MTJ), which are the structure parameters of an MTJ These intrinsic parameters can be predetermined using the experimental measurement or, in principle, using the first-principle calculation method for an MTJ with the three key layers of FM/l/FM. Furthermore, a series of experimental data for an MTJ, for example, a spin-valve-type MTJ of Ta (5 nm)/Ni79Fe21(25 nm)/lr(22)Mn(78)(12 nM)/Co75Fe25(4 nm)/Al(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta (5 nm) in this work, can be self-consistently evaluated and explained using such concise explicit function formulations. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33645]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, XF. An explicit function expression for dc bias and temperature dependence of magnetoresistances in magnetic tunnel junctions[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2002,18(6):497. |
| APA | Han, XF.(2002).An explicit function expression for dc bias and temperature dependence of magnetoresistances in magnetic tunnel junctions.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,18(6),497. |
| MLA | Han, XF."An explicit function expression for dc bias and temperature dependence of magnetoresistances in magnetic tunnel junctions".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 18.6(2002):497. |
入库方式： OAI收割
来源：物理研究所
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