Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
文献类型：期刊论文
| 作者 | Xu, PQ ; Jiang, Y ; Chen, Y ; Ma, ZG ; Wang, XL ; Deng, Z ; Li, Y ; Jia, HQ ; Wang, WX ; Chen, H |
| 刊名 | NANOSCALE RESEARCH LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 7 |
| 关键词 | FIELD-EFFECT TRANSISTORS |
| ISSN号 | 1931-7573 |
| 通讯作者 | Jiang, Y: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, 8,3rd South St, Beijing 100190, Peoples R China. |
| 中文摘要 | GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier. |
| 收录类别 | SCI |
| 资助信息 | National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]; National Nature Science Foundations [60890192, 50872146, 60877006] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33686]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, PQ,Jiang, Y,Chen, Y,et al. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD[J]. NANOSCALE RESEARCH LETTERS,2012,7. |
| APA | Xu, PQ.,Jiang, Y.,Chen, Y.,Ma, ZG.,Wang, XL.,...&Chen, H.(2012).Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.NANOSCALE RESEARCH LETTERS,7. |
| MLA | Xu, PQ,et al."Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD".NANOSCALE RESEARCH LETTERS 7(2012). |
入库方式： OAI收割
来源：物理研究所
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