Annealing and activation of silicon implanted in semi-insulating InP substrates
文献类型：期刊论文
| 作者 | Dong, HW ; Zhao, YW ; Li, JM |
| 刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| 出版日期 | 2003 |
| 卷号 | 6期号:4页码:215 |
| 关键词 | SI+-IMPLANTATION PHOSPHIDE VAPOR UNDOPED INP FE WAFERS UNIFORMITY PRESSURE |
| ISSN号 | 1369-8001 |
| 通讯作者 | Dong, HW: Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate. These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33816]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dong, HW,Zhao, YW,Li, JM. Annealing and activation of silicon implanted in semi-insulating InP substrates[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2003,6(4):215. |
| APA | Dong, HW,Zhao, YW,&Li, JM.(2003).Annealing and activation of silicon implanted in semi-insulating InP substrates.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,6(4),215. |
| MLA | Dong, HW,et al."Annealing and activation of silicon implanted in semi-insulating InP substrates".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6.4(2003):215. |
入库方式： OAI收割
来源：物理研究所
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