Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer
文献类型：期刊论文
| 作者 | Ma, QL ; Feng, JF ; Feng, G ; Oguz, K ; Han, XF ; Coey, JMD |
| 刊名 | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
 |
| 出版日期 | 2010 |
| 卷号 | 322期号:1页码:108 |
| 关键词 | TEMPERATURE STABILITY |
| ISSN号 | 0304-8853 |
| 通讯作者 | Feng, JF: Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland. |
| 中文摘要 | MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magneto resistance (TMR) values occur at low and high annealing temperatures (T(a)), respectively. The TMR ratio remains inverted up to T(a)=300 degrees C and it becomes normal around T(a)=350 degrees C. The exchange bias of FeMn disappears at high T(a). The sign reversal of the TMR ratio is mainly attributed to the disappearance of the exchange bias due to manganese diffusion during the annealing process. (C) 2009 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | Science Foundation Ireland; Ireland-China Scientific Exchange Scheme; EU; Chinese State Key Project of Fundamental Research of Ministry of Science and Technology (MOST) [2006CB932200]; National Natural Science Foundation (NSFC) [10574156, 50528101, 50721001] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33819]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ma, QL,Feng, JF,Feng, G,et al. Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2010,322(1):108. |
| APA | Ma, QL,Feng, JF,Feng, G,Oguz, K,Han, XF,&Coey, JMD.(2010).Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,322(1),108. |
| MLA | Ma, QL,et al."Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 322.1(2010):108. |
入库方式： OAI收割
来源：物理研究所
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