Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials
文献类型：期刊论文
| 作者 | Zhang, MH ; Guo, LW ; Li, HW ; Li, W ; Huang, Q ; Bao, CL ; Zhou, JM ; Liu, BL ; Xu, ZY ; Zhang, YH ; Lu, LW |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2001 |
| 卷号 | 63期号:11 |
| 关键词 | BEAM-EPITAXIAL GAAS SPATIAL LIGHT MODULATORS MULTIPLE-QUANTUM WELLS |
| ISSN号 | 1098-0121 |
| 通讯作者 | Zhang, MH: Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33821]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, MH,Guo, LW,Li, HW,et al. Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials[J]. PHYSICAL REVIEW B,2001,63(11). |
| APA | Zhang, MH.,Guo, LW.,Li, HW.,Li, W.,Huang, Q.,...&Lu, LW.(2001).Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials.PHYSICAL REVIEW B,63(11). |
| MLA | Zhang, MH,et al."Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials".PHYSICAL REVIEW B 63.11(2001). |
入库方式： OAI收割
来源：物理研究所
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