Approach to optimize the pinning effect of a NiMn layer with reduced thickness under a much shortened annealing process
文献类型：期刊论文
| 作者 | Dai, B ; Cai, JW ; Lai, WY ; Shen, F ; Zhang, Z ; Yu, GH |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 82期号:21页码:3722 |
| 关键词 | NANO-OXIDE LAYERS SPIN VALVES FILMS ANISOTROPY |
| ISSN号 | 0003-6951 |
| 通讯作者 | Dai, B: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We investigated the magnetic properties of sputtered Ni0.8Fe0.2/Ni1-xMnx (0.43less than or equal to xless than or equal to0.70) bilayers and found that an antiferromagnetic equiatomic NiMn layer could be formed through Mn diffusion with reduced thickness and a much shortened annealing time if the Ni1-xMnx layer is off-stoichiometric with suitable excess Mn. An overdose of Mn in a NiMn precursor layer was demonstrated to enhance the migration and the diffusion of Mn atoms, which seemed to promote the formation of antiferromagnetic NiMn of the theta phase, but in the mean time led to the deterioration of the adjacent ferromagnetic layer. We thus introduced the nano-oxide layer in the ferromagnetic layer near the interface of ferromagnetic and antiferromagnetic layers, which was proven to be very efficient to prevent Mn atoms from further intruding into the ferromagnetic layer even in the case that a large amount of Mn atoms were involved. As a result, a ferromagnetic layer pinned by a NiMn layer with excellent performance has been developed in a much simplified process. (C) 2003 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/33953]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dai, B,Cai, JW,Lai, WY,et al. Approach to optimize the pinning effect of a NiMn layer with reduced thickness under a much shortened annealing process[J]. APPLIED PHYSICS LETTERS,2003,82(21):3722. |
| APA | Dai, B,Cai, JW,Lai, WY,Shen, F,Zhang, Z,&Yu, GH.(2003).Approach to optimize the pinning effect of a NiMn layer with reduced thickness under a much shortened annealing process.APPLIED PHYSICS LETTERS,82(21),3722. |
| MLA | Dai, B,et al."Approach to optimize the pinning effect of a NiMn layer with reduced thickness under a much shortened annealing process".APPLIED PHYSICS LETTERS 82.21(2003):3722. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。