Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface
文献类型：期刊论文
| 作者 | Wang, LL ; Ma, XC ; Ning, YX ; Ji, SH ; Fu, YS ; Jia, JF ; Kelly, KF ; Xue, QK |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:15 |
| 关键词 | GROWTH PHASE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, LL: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Surface structure of the Sn islands 5 ML high, prepared on Si(111)-(2 root 3X2 root 3)-Sn substrate, is investigated by low temperature scanning tunneling microscopy/spectroscopy. Due to the elastic strain relaxation in the islands, the in-plane unit cell structure distorts and the apparent height of the surface atoms varies regularly to form an overall modulated strip structure. The quantum well states are observed to depend on the relative position within this structure, which implies the change of the surface chemical potential induced by the elastic strain relaxation as well. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation and Ministry of Science and Technology of China |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34042]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, LL,Ma, XC,Ning, YX,et al. Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface[J]. APPLIED PHYSICS LETTERS,2009,94(15). |
| APA | Wang, LL.,Ma, XC.,Ning, YX.,Ji, SH.,Fu, YS.,...&Xue, QK.(2009).Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface.APPLIED PHYSICS LETTERS,94(15). |
| MLA | Wang, LL,et al."Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface".APPLIED PHYSICS LETTERS 94.15(2009). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。