Atomic-Scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001)
文献类型：期刊论文
| 作者 | Gao, T ; Gao, YB ; Chang, CZ ; Chen, YB ; Liu, MX ; Xie, SB ; He, K ; Ma, XC ; Zhang, YF ; Liu, ZF |
| 刊名 | ACS NANO
 |
| 出版日期 | 2012 |
| 卷号 | 6期号:8页码:6562 |
| 关键词 | MN FE(001) GROWTH FILMS INTERFERENCE GAS STM |
| ISSN号 | 1936-0851 |
| 通讯作者 | Zhang, YF: Peking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, Beijing Natl Lab Mol Sci,Ctr Nanochem CNC, Beijing 100871, Peoples R China. |
| 中文摘要 | We report the fabrication of a novel epitaxial graphene(EG)/Mn/SiC(0001) sandwiched structure through the intercalation of as-deposited Mn atoms on graphene surfaces, with the aid of scanning tunneling microscope, low energy electron diffraction, and X-ray photoelectron spectroscopy. We found that Mn can intercalate below both sp(3)-hybridized carbon-rich interface layer and monolayer graphene, along with the formation of various embedded Mn islands showing different surface morphologies. The unique trait of the sandwiched system is that the strong interaction between the carbon-rich interface layer and SiC(0001) can be decoupled to some degrees, and contemporaneous, an n-doping effect is observed by mapping the energy band of the system using angle-resolved photoemission spectroscopy. Moreover, what deserves our special attention is that the Intercalated islands can only evolve below monolayer graphene when a bilayer coexists, accounting for an intriguing graphene thickness-dependent Intercalation effect. In the long run, we believe that the construction of graphene/Mn/SiC(0001) systems offers Ideal candidates for exploring some intriguing physical properties such as the magnetic property of two-dimensional transition metal systems. |
| 收录类别 | SCI |
| 资助信息 | Ministry of Science and Technology of China [2012CB921404, 2011CB921903]; National Natural Science Foundation of China [21073003] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34052]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, T,Gao, YB,Chang, CZ,et al. Atomic-Scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001)[J]. ACS NANO,2012,6(8):6562. |
| APA | Gao, T.,Gao, YB.,Chang, CZ.,Chen, YB.,Liu, MX.,...&Liu, ZF.(2012).Atomic-Scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001).ACS NANO,6(8),6562. |
| MLA | Gao, T,et al."Atomic-Scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001)".ACS NANO 6.8(2012):6562. |
入库方式： OAI收割
来源：物理研究所
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