Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)
文献类型：期刊论文
| 作者 | Wu, R ; Wang, LL ; Zhang, Y ; Ma, XC ; Jia, JF ; Xue, QK |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:2 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY DISCOMMENSURATE PHASES MAGIC CLUSTERS GROWTH SURFACE RECONSTRUCTIONS GE(111)/GA GA |
| ISSN号 | 0256-307X |
| 通讯作者 | Wu, R: Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Two Ge-induced incommensurate phases, gamma and beta, on Si(111) are observed and studied by in situ scanning tunneling microscopy. The gamma phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si(111)-1 x 1 surface. The beta phase consists of two kinds of triangular domains whose stacking sequences are faulted and unfaulted with respect to the Si(111)-1 x 1 surface, respectively. In the beta phase, two types of domain walls, "zigzag" and "face-to-face", form to release the strain. The triangular domains all exhibit a quasi-1 x 1 hexagonal close-packed structure. By studying the structural evolution from magic clusters to incommensurate structures, the structure models for gamma and beta phases are proposed. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [20733008, 10904168]; National Basic Research Program of China [2009CB929404] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34053]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, R,Wang, LL,Zhang, Y,et al. Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)[J]. CHINESE PHYSICS LETTERS,2010,27(2). |
| APA | Wu, R,Wang, LL,Zhang, Y,Ma, XC,Jia, JF,&Xue, QK.(2010).Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111).CHINESE PHYSICS LETTERS,27(2). |
| MLA | Wu, R,et al."Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)".CHINESE PHYSICS LETTERS 27.2(2010). |
入库方式： OAI收割
来源：物理研究所
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