Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface
文献类型：期刊论文
| 作者 | Xue, Q ; Xue, QK ; Bakhtizin, RZ ; Hasegawa, Y ; Tsong, IST ; Sakurai, T ; Ohno, T |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 1999 |
| 卷号 | 59期号:19页码:12604 |
| 关键词 | MOLECULAR-BEAM EPITAXY ENERGY ELECTRON-DIFFRACTION LASER-DIODES AB-INITIO GROWTH RECONSTRUCTIONS GAN(0001) POLARITY |
| ISSN号 | 0163-1829 |
| 通讯作者 | Tsong, IST: Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan. |
| 中文摘要 | A number of superstructures of the GaN (0001) surface have been investigated systematically by reflection high-energy electron diffraction, scanning tunneling microscopy, and first-principles theoretical calculations. The GaN-thin films are grown on the Si-terminated 6H-SiC (0001) surface by an N plasma-assisted molecular-beam epitaxy under the Ga-rich condition. While the as-grown GaN surface is revealed to be a featureless 1x1 structure, post-growth deposition of Ga at lower temperatures results in the formation of a series of ordered structures, such as 2X2, 4X4, 5X5, 5 root 3X2 root 13, root 7X root 7, and 10x10 in the order of the increasing Ga coverage. An 1x1-Ga-fluid structure is obtained with the highest Ga coverage. Neither ordered structure nor smooth morphology has been observed under the N-rich regime. We conclude that the atomic structures of all these Ga-rich phases can be described best by a Ga-adatom scheme. We further show that the 5x5 and 5 root 3X2 root 13 phases are two configurations that exhibit a unique one-dimensional characteristic in the adatom arrangement. Their structures can be understood by Peierls distortion against Fermi-surface instability under the Ga-adatom scheme. [S0163-1829(99)10719-7]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34057]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, Q,Xue, QK,Bakhtizin, RZ,et al. Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface[J]. PHYSICAL REVIEW B,1999,59(19):12604. |
| APA | Xue, Q.,Xue, QK.,Bakhtizin, RZ.,Hasegawa, Y.,Tsong, IST.,...&Ohno, T.(1999).Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface.PHYSICAL REVIEW B,59(19),12604. |
| MLA | Xue, Q,et al."Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface".PHYSICAL REVIEW B 59.19(1999):12604. |
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来源：物理研究所
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