Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires
文献类型：期刊论文
| 作者 | Zhang, WX ; Delerue, C ; Niquet, YM ; Allan, G ; Wang, EG |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2010 |
| 卷号 | 82期号:11 |
| 关键词 | FIELD-EFFECT TRANSISTORS CARRIER MOBILITY ENHANCEMENT GATE PERFORMANCE SI |
| ISSN号 | 1098-0121 |
| 通讯作者 | Zhang, WX: IEMN, Dept ISEN, 41 Blvd Vauban, F-59046 Lille, France. |
| 中文摘要 | Using a sp(3)d(5)s* tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is calculated and its dependence on the temperature, density of electrons, and size of the nanowires is investigated. We predict that, as a result of strong quantum confinement, (1) electrons couple to a wide and complex distribution of phonon modes and (2) the mobility has a nonmonotonic variation with wire diameter and is strongly reduced with respect to the bulk. |
| 收录类别 | SCI |
| 资助信息 | French Embassy in China; French National Research Agency (ANR) [ANR-07-NANO-023-02]; Delegation Generale pour l'Armement, French Ministry of Defense [2008.34.0031] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34059]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, WX,Delerue, C,Niquet, YM,et al. Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires[J]. PHYSICAL REVIEW B,2010,82(11). |
| APA | Zhang, WX,Delerue, C,Niquet, YM,Allan, G,&Wang, EG.(2010).Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires.PHYSICAL REVIEW B,82(11). |
| MLA | Zhang, WX,et al."Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires".PHYSICAL REVIEW B 82.11(2010). |
入库方式： OAI收割
来源：物理研究所
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