Atomistic Simulations of Self-Trapped Exciton Formation in Silicon Nanostructures: The Transition from Quantum Dots to Nanowires
文献类型：期刊论文
| 作者 | Wang, Y ; Zhang, RQ ; Frauenheim, T ; Niehaus, TA |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2009 |
| 卷号 | 113期号:30页码:12935 |
| 关键词 | TIGHT-BINDING METHOD ELECTRONIC-PROPERTIES STATES NANOCLUSTERS SYSTEMS |
| ISSN号 | 1932-7447 |
| 通讯作者 | Niehaus, TA: Univ Bremen, Bremen Ctr Computat Mat Sci, D-28359 Bremen, Germany. |
| 中文摘要 | Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in axial and radial directions is systematically investigated. Excited state relaxation leads to significant Stokes shifts for short nanorods with lengths less than 2 nm but has little effect oil the luminescence intensity. The formation of self-trapped excitons is likewise observed for short nanostructures only; longer wires exhibit fully delocalized excitons with negligible geometrical distortion at the excited state minimum. |
| 收录类别 | SCI |
| 资助信息 | MOST of China [2006CB9330001]; Hong Kong SAR [103907] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34064]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, Y,Zhang, RQ,Frauenheim, T,et al. Atomistic Simulations of Self-Trapped Exciton Formation in Silicon Nanostructures: The Transition from Quantum Dots to Nanowires[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2009,113(30):12935. |
| APA | Wang, Y,Zhang, RQ,Frauenheim, T,&Niehaus, TA.(2009).Atomistic Simulations of Self-Trapped Exciton Formation in Silicon Nanostructures: The Transition from Quantum Dots to Nanowires.JOURNAL OF PHYSICAL CHEMISTRY C,113(30),12935. |
| MLA | Wang, Y,et al."Atomistic Simulations of Self-Trapped Exciton Formation in Silicon Nanostructures: The Transition from Quantum Dots to Nanowires".JOURNAL OF PHYSICAL CHEMISTRY C 113.30(2009):12935. |
入库方式： OAI收割
来源：物理研究所
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