Atomistic study of GaN surface grown on Si(111)
文献类型：期刊论文
| 作者 | Wang, ZT ; Yamada-Takamura, Y ; Fujikawa, Y ; Sakurai, T ; Xue, QK |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:3 |
| 关键词 | MOLECULAR-BEAM EPITAXY SINGLE CRYSTALLINE GAN INVERSION DOMAINS GAN(000(1)OVER-BAR) SURFACE HETEROEPITAXIAL GROWTH INTERMEDIATE LAYER BUFFER LAYER POLARITY RECONSTRUCTIONS MORPHOLOGY |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, ZT: Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan. |
| 中文摘要 | GaN is directly grown on Si(111) by radio-frequency plasma-assisted molecular-beam epitaxy, and the surface is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). By optimizing the growth condition, well-defined surface reconstructions are observed in atomically-resolved STM images after the additional Ga deposition, indicating the uniform N-polarity of the grown film. We show that N-rich condition in the initial GaN growth and slightly Ga-rich condition in the subsequent growth are critical in order to achieve monopolar uniform GaN films. (c) 2005 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/34065]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, ZT,Yamada-Takamura, Y,Fujikawa, Y,et al. Atomistic study of GaN surface grown on Si(111)[J]. APPLIED PHYSICS LETTERS,2005,87(3). |
| APA | Wang, ZT,Yamada-Takamura, Y,Fujikawa, Y,Sakurai, T,&Xue, QK.(2005).Atomistic study of GaN surface grown on Si(111).APPLIED PHYSICS LETTERS,87(3). |
| MLA | Wang, ZT,et al."Atomistic study of GaN surface grown on Si(111)".APPLIED PHYSICS LETTERS 87.3(2005). |
入库方式： OAI收割
来源：物理研究所
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